Resistive Random-Entry Memory > 자유게시판

• 목록
• 답변
• 글쓰기
• 게시판 리스트 옵션
  • 수정
  • 삭제

Resistive random-entry memory (ReRAM or RRAM) is a sort of non-unstable (NV) random-access (RAM) pc memory that works by changing the resistance across a dielectric strong-state material, often referred to as a memristor. One major benefit of ReRAM over different NVRAM applied sciences is the power to scale beneath 10 nm. ReRAM bears some similarities to conductive-bridging RAM (CBRAM) and part-change memory (PCM) in that they modify dielectric material properties. CBRAM involves one electrode offering ions that dissolve readily in an electrolyte materials, while PCM entails producing enough Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous section modifications. By distinction, ReRAM involves generating defects in a thin oxide layer, referred to as oxygen vacancies (oxide bond places where the oxygen has been eliminated), which may subsequently cost and drift under an electric field. The motion of oxygen ions and vacancies in the oxide could be analogous to the movement of electrons and holes in a semiconductor. Though ReRAM was initially seen as a replacement expertise for flash memory, the price and performance benefits of ReRAM have not been sufficient for companies to proceed with the substitute.

Apparently, a broad range of supplies can be used for ReRAM. HfO2 can be used as a low-voltage ReRAM has encouraged researchers to research more potentialities. RRAM is the registered trademark title of Sharp Company, a Japanese electronic elements producer, in some international locations, including members of the European Union. An power-efficient chip called NeuRRAM fixes an previous design flaw to run large-scale AI algorithms on smaller gadgets, reaching the same accuracy as digital computers, not less than for functions needing only some million bits of neural state. As NeuRRAM is an analog expertise, it suffers from the identical analog noise problems that plague different analog semiconductors. Whereas this can be a handicap, many neural processors don't need bit-excellent state storage to do useful work. Within the early 2000s, ReRAMs have been beneath growth by a number of firms, some of which filed patent functions claiming numerous implementations of this expertise. ReRAM has entered commercialization on an initially limited KB-capacity scale. In February 2012, Rambus purchased a ReRAM company called Unity Semiconductor for $35 million.

Panasonic launched a ReRAM evaluation package in Might 2012, primarily based on a tantalum oxide 1T1R (1 transistor - 1 resistor) memory cell architecture. In 2013, Crossbar launched an ReRAM prototype as a chip about the dimensions of a postage stamp that would store 1 TB of knowledge. The memory structure (Ag/a-Si/Si) intently resembles a silver-based CBRAM. Additionally in 2013, Hewlett-Packard demonstrated a memristor-primarily based ReRAM wafer, and predicted that a hundred TB SSDs primarily based on the expertise might be obtainable in 2018 with 1.5 PB capacities out there in 2020, just in time for the cease in progress of NAND flash capacities. Totally different forms of ReRAM have been disclosed, based on completely different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. In 1963 and 1964, a skinny-film resistive memory array was first proposed by members of the College of Nebraska-Lincoln. Additional work on this new skinny-movie resistive memory was reported by J.G. In 1970, members of the Atomic Energy Research Institution and University of Leeds tried to clarify the mechanism theoretically.

1180 In Could 1997, a research crew from the College of Florida and Honeywell reported a producing method for "magneto-resistive random access memory" by using electron cyclotron resonance plasma etching. Leon Chua argued that every one two-terminal non-unstable Memory Wave Routine gadgets including ReRAM ought to be considered memristors. Stan Williams of HP Labs additionally argued that ReRAM was a memristor. However, others challenged this terminology and the applicability of memristor concept to any bodily realizable gadget is open to question. Whether or not redox-primarily based resistively switching parts (ReRAM) are coated by the current memristor principle is disputed. Silicon oxide presents an fascinating case of resistance switching. Two distinct modes of intrinsic switching have been reported - surface-based, Memory Wave Routine wherein conductive silicon filaments are generated at exposed edges (which may be internal-inside pores-or external-on the surface of mesa buildings), and bulk switching, during which oxygen vacancy filaments are generated inside the majority of the oxide. The previous mode suffers from oxidation of the filaments in air, requiring hermetic sealing to enable switching.